PART |
Description |
Maker |
DSM390S2858CT1 M390S2858CT1 M390S2858CT1-C7A M390S |
SDRAM DIMM SDRAM的内 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYM72V32736BLT8-K HYM72V32736BT8-K HYM72V32736BT8- |
SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC SDRAM - Unbuffered DIMM 256MB x64 SDRAM Module
|
Hynix Semiconductor
|
NT256D64S88A2GM NT256D64S88A2GM-7K NT256D64S88A2GM |
256Mb: 32Mx64 unbuffered DDR SO-DIMM module based 32Mx8 SDRAM 200pin One Bank Unbuffered DDR SO-DIMM 200pin一个银行缓冲的DDR SO - DIMM插槽
|
NANYA ETC Electronic Theatre Controls, Inc.
|
HMT351R7CFR4A-PB HMT351R7CFR8A-PB HMT42GR7CMR4A-H9 |
DDR3L SDRAM Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
M390S2858DT1-C7C M390S2858DT1 M390S2858DT1-C7A |
128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD 128Mx72 SDRAM的内存与锁相 128Mx72 SDRAM DIMM with PLL & Register based on Stacked 128Mx4, 4Banks 8K Ref., 3.3V SDRAMs with SPD Data Sheet
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HMT325V7EFR8A-PB HMT325V7EFR8A-RD HMT325V7EFR8A-H9 |
DDR3L SDRAM VLP Registered DIMM Based on 2Gb E-die
|
Hynix Semiconductor
|
HMT351V7EFR4C-H9 HMT325V7EFR8C-PB HMT325V7EFR8C-RD |
DDR3 SDRAM VLP Registered DIMM Based on 2Gb E-die
|
Hynix Semiconductor
|
HMT82GV7MMR4C-G7 HMT41GV7MFR4C-G7 HMT82GV7MMR4C-H9 |
DDR3 SDRAM VLP Registered DIMM Based on 4Gb M-die
|
Hynix Semiconductor
|
NT128D64S88A2GM-75B NT128D64S88A2GM-7K NT128D64S88 |
128Mb unbuffered DDR SO-DIMM module based on 16Mx8 SDRAM
|
NANYA
|
HMT351V7CFR4C-H9 HMT41GV7CMR4C-H9 HMT325V7CFR8C HM |
DDR3 SDRAM VLP Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
HDD128M72D18RPW-13A HDD128M72D18RPW-16B HDD128M72D |
DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM Module 1024Mbyte (128Mx72bit), based on 64Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块1024Mbyte28Mx72bit),4Mx8BanksK的参考依据。,184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
M368L1624BT1 |
8Mx64 DDR SDRAM 184pin DIMM based on 16Mx16 Data Sheet
|
Samsung Electronic
|